View PTFA220041M_33104.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PTFA220041M
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz
Description
The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency and linearity performance in a small, overmolded plastic package. PTFA220041M Package PG-SON-10
VDD = 28 V, IDQ = 50 mA, 1 = 1841.9 M Hz, 2 = 1842 M Hz
Two-tone Drive-up
Features
* Typical two-carrier WCDMA performance, 1842 MHz, 8 dB PAR - POUT = 27 dBm Avg - ACPR = -44 dBc Typical CW performance, 1842 MHz, 28 V - POUT = 37 dBm - Efficiency = 53.5% - Gain = 17.9 dB Typical CW performance, 940 MHz, 28 V - POUT = 37.5 dBm - Efficiency = 57% - Gain = 19.7 dB Capable of handling 10:1 VSWR @ 28 V, 5 W (CW) output power Integrated ESD protection : Human Body Model, Class 2 (minimum) Excellent thermal stability Pb-free and RoHS compliant
21
60
*
20
50
Efficiency (%)
Gain (dB)
Gain
19 40
*
18
30
* * * *
Efficiency
17 33 34 35 36 37 38 39 20
Output Power, PEP (dBm)
Two-tone Measurements (not subject to production test - verified by design / characterization in Infineon test fixture) VDD = 28 V, IDQ = 50 mA, POUT = 4 W PEP, = 1842 MHz, tone spacing = 1 MHz Characteristic
Gain Drain Efficiency Intermodulation Distortion Input Return Loss
Symbol
Gps
Min
18.5 35 -- --
Typ
19 37.5 -29 -8
Max
-- -- -28 -7
Unit
dB % dBc dB
hD
IMD IRL
All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 18 Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (not subject to production test - verified by design / characterization in Infineon test fixture) VDD = 28 V, IDQ = 50 mA, POUT = 5 W PEP, = 940 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion Input Return Loss
Symbol
Gps
Min
-- -- -- --
Typ
18.5 37 -30 -10
Max
-- -- -- --
Unit
dB % dBc dB
hD
IMD IRL
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 A VDS = 28 V, VGS = 0 V VGS = 10 V, VDS = 0.1 A VDS = 28 V, IDQ = 50 mA VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS IDSS RDS(on) VGS IGSS
Min
65 -- -- 2.0 --
Typ
-- -- 2.01 2.5 --
Max
-- 1.0 -- 3.0 1.0
Unit
V A W V A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Storage Temperature Range Thermal Resistance (TCASE = 70C, 5 W CW)
Symbol
VDSS VGS TJ TSTG RqJC
Value
65 -0.5 to +12 175 -40 to +150 5.5
Unit
V V C C C/W
Moisture Sensitivity Level
Level
3
Test Standard
IPC/JEDEC J-STD-020
Package Temperature
260
Unit
C
Ordering Information
Type and Version
PTFA220041M V4
Package Outline
PG-SON-10
Package Description
Molded plastic, SMD
Shipping
Tape & Reel, 500 pcs
Data Sheet
2 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Typical Performance, 1842 MHz (data taken in Infineon test fixture)
VDD = 28 V, IDQ = 50 mA, = 1842 MHz, 3GPP WCDMA, PAR = 8.0 dB, 10 MHz carrier spacing, BW 3.84 MHz
20 19 18 17 50 -15 -20
Two-carrier WCDMA 3GPP
Two-carrier WCDMA 3GPP Drive-up
VDD = 28 V, IDQ = 50 mA, 3GPP WCDMA, PAR = 8.0 dB, 10 MHz carrier spacing, BW 3.84 MHz
Gain
40
Drain Efficiency (%)
-25
IM3 Lower IM3 Upper
IMD (dBc)
Gain (dB)
30 20
-30 -35 -40 -45 -50 25 27
Efficiency
16 15 25 27 29 31 33 35 10 0
ACPR
29
31
33
35
Output Power (dBm)
Output Power (dBm)
VDD = 28 V, IDQ = 50 mA, = 1842 MHz, 3GPP WCDMA, PAR = 8.0 dB, 10 MHz carrier spacing, BW 3.84 MHz
0 -10 -20 -30 -40 -50 25 27 29 50 20 19 18
Two-carrier WCDMA 3GPP Drive-up
Power Sweep, CW Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 50 mA, = 1842 MHz
65
Drain Efficiency (%)
IMD & ACPR (dBc)
30
45
Efficiency IMD Low ACPR
31 33 35
20 10 0
17 16 15 30
Efficiency
35 25 15
31
32
33
34
35
36
37
38
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 18
Rev. 08, 2010-06-07
Drain Efficiency (%)
IMD Up
40
Gain
55
Gain (dB)
PTFA220041M
Confidential, Limited Internal Distribution
Typical Performance, 1842 MHz (cont.)
VDD = 28 V, IDQ = 50 mA, 1 = 1841.9 MHz, 2 = 1842 MHz
-15 -20 70 60
Two-tone Drive-up
VDD = 28 V, 1 = 1841.9 MHz, 2 = 1842 MHz
Two-tone Gain vs. Output Power
20.0 19.5
IDQ = 75 mA IDQ = 63 mA IDQ = 50 mA IDQ = 25 mA
Power Gain (dB)
IMD (dBc)
-25 -30
IMD3
Efficiency (%)
19.0 18.5 18.0 17.5 17.0 16.5
50 40
Efficiency
-35 -40 33 34 35 36 37 38 39 30 20
16.0 33 34 35 36 37 38 39
Output Power, PEP (dBm)
Output Power (dBm)
Two-tone Broadband Gain, Efficiency & RL vs. Frequency
VDD = 28V, IDQ = 50 mA, avg POUT = 2 W, tone spacing = 100 kHz
Small Signal CW Gain & Input Return Loss
VDD = 28 V, IDQ = 50 mA
70
5 -5 -15 -25 -35 -45 -55 1720 1760 1800 1840 1880 1920 1960
20
0.0 -2.0 -4.0 -6.0
Gain / Efficiency (dB / %)
Efficiency
Power Gain (dB)
50 40 30 20 10
Gain
16 14 12 10 1692 1792 1892 1992
Gain
IMD3
IRL
-8.0
-10.0
Frequency (MHz)
Frequency (MHz)
Data Sheet
4 of 18
Rev. 08, 2010-06-07
Input Return Loss (dB)
60
Return Loss (dB), IMD (dBc)
RL
18
PTFA220041M
Confidential, Limited Internal Distribution
Typical Performance, 1842 MHz (cont.)
CW Performance Gain & Efficiency vs. Output Power & VDD
IDQ = 50 mA, = 1842 MHz
CW Performance Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 50 mA, = 1842 MHz
20.0 19.5
60
22
60
Gain
50
Power Gain (dB)
Efficiency (%)
19.0 18.5 18.0 17.5 17.0 24 26 28 30 32 34 36 38 VDD = 32 V VDD = 28 V VDD = 24 V
40 30 20 10 0
18
40
16
Efficiency
Efficiency
14 30 31 32 33
+85C +25C -30C 34 35 36 37 38
30
20
Output Power (dBm)
Output Power (dBm)
VDD = 28 V, IDQ = 50 mA, = 1842 MHz, POUT (PEP) = 4 W
-10 -20 -30 -40 -50 -60 0 20 40 60 80 100 -10
Intermodulation Distortion vs. Tone Spacing
VDD = 28 V, IDQ = 50 mA, 1 = 1841.9 MHz, 2 = 1842 MHz
Intermodulation Distortion vs. Output Power
3rd Order
-20
3rd Order
IMD (dBc)
5th
IMD (dBc)
-30 -40 -50 -60 32 34 36 38 40
5th
7th
7th
Tone Spacing (MHz)
Output Power, PEP (dBm)
Data Sheet
5 of 18
Rev. 08, 2010-06-07
Drain Efficiency (%)
20
Gain
50
Gain (dB)
PTFA220041M
Confidential, Limited Internal Distribution
Broadband Circuit Impedance, 1842 MHz
Frequency
MHz 720 820 869 894 920 940 960 1805 1880 1930 1990 2110 2170 R 2.4 1.8 1.6 1.6 1.6 1.6 1.6 2.1 2.1 1.8 2.1 2.5 2.0
Z Source W
jX 16.9 13.4 11.8 12.0 10.6 10.1 10.3 3.2 2.2 1.3 1.5 2.0 2.0 R
Z Load W
jX 25.2 15.2 18.2 18.4 21.5 21.4 18.9 12.1 10.9 10.6 8.1 8.4
0. 6
0.10
0 .15
45.2 31.0 21.3 22.1 14.5 15.2 16.1 6.8 6.4 6.3 4.3 4.9 4.4
D
Z Source
Z Load
G S
8.8
0.
5
0. 7
0. 8
0. 9
0. 4 0
0. 35
1
Z0 = 50 W
0. 0
45
Z Source
720 MHz
0.
0.
R -->
RD G E NE
RA T O
2170 MHz 720 MHz
0 .1
- WAVE LE NGT H
S T OW A
2170 MHz
0.0 0.1 0.3 0.2 0.4 0.5
W ARD LOAD T HS TO L E NG
Data Sheet
0.1
6 of 18
Rev. 08, 2010-06-07
2
0.
5
4
3
Z Load
0. 2
PTFA220041M
Confidential, Limited Internal Distribution
Reference Circuit, 1842 MHz
R804 2000 Ohm TL103 TL107
1 4 3 2
VDD 28 V C801 1000000 pF
8 4
S5
In NC
2 3
Out NC
6
1
7
5
TL101
TL105
R805 10 Ohm S3
3
C802 1000000 pF
DCVS V1
S2 L1 22 nH
R803 500 Ohm
C803 1000000 pF
R801 1200 Ohm
2 1
C
4
S4
B
3
TL106 R102 10 Ohm TL104 GATE DUT TL118
1
R802 1300 Ohm C105 7.5 pF TL116 C101 6.2 pF
3 4
E
C104 7.5 pF TL113 TL114
3

2
TL102
TL117
1
2
2 3
TL110
4
TL111
1 3 2
TL109
C103 12 pF
TL108 RF_IN
1
4
Er=3.48 H=20 mil RO/RO4350B1
TL115 C107 7.5 pF
TL112 C106 7.5 pF
C102 4.7 pF
Reference circuit input schematic for = 1842 MHz
TL225 TL224 TL226 TL216 TL215
TL201
TL214 C204 100000 pF C205 12 pF TL206
2 3 1
C206 2200000 pF
3 2 1
TL223
TL207
TL205
2
3 1
TL211 TL202
2
3 1
VDD 28 V
TL203 L2 22 nH TL204 TL212 TL210 DRAIN DUT TL208
2
3 1
TL209
TL213
TL222
1 3 2
TL221
1 3 2
TL220

TL219
1 3 2
TL217
C207 12 pF
TL218 RF_OUT
C202 4.7 pF
C203 4.7 pF
C201 3.6 pF
Reference circuit output schematic for = 1842 MHz Data Sheet 7 of 18 Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Reference Circuit, 1842 MHz (cont.)
Electrical Characteristics at 1842 MHz Transmission Line
Input TL101 TL102 TL103 TL104 TL105 TL106 TL107 TL108 TL109 TL110 TL111 TL112, TL113, TL115, TL116 TL114, TL 117 TL118 0.019 , 25.04 W 0.052 , 41.75 W 0.013 , 41.75 W 0.015 , 54.17 W 0.033 , 51.98 W 0.149 , 51.98 W 0.034 , 51.98 W 0.008 , 51.98 W 0.005 , 41.75 W 0.021 , 51.98 W W = 1.524, L = 0.508 W = 1.087, L = 2.108 W = 1.524 W = 3.048, L = 1.778 W = 1.524, L = 5.08 W = 1.524, L = 1.27 W = 1.016, L = 1.524 W = 1.087, L = 3.264 W = 1.087, L = 14.681 W = 1.087, L = 3.378 W1 = 1.087, W2 = 1.087, W3 = 0.813 W = 0, L = 0 W1 = 1.087, W2 = 0.813, W3 = 1.087 W4 = 0.813 W1 = 3.048, W2 = 0.762, W3 = 3.048, W4 = 0.762 W = 60, L = 20 W = 43, L = 83 W = 60 W = 120, L = 70 W = 60, L = 200 W = 60, L = 50 W = 40, L = 60 W = 43, L = 129 W = 43, L = 578 W = 43, L = 133 W1 = 43, W2 = 43, W3 = 32 W = 0, L = 0 W1 = 43, W2 = 32, W3 = 43, W4 = 32 W1 = 120, W2 = 30, W3 = 120, W4 = 30
Electrical Characteristics
Dimensions: mm
Dimensions: mils
Output TL201, TL225, TL226 TL202 TL203 TL204 TL205 TL206, TL207 TL208 TL209 TL210 TL211 TL212 TL213 TL214 TL215 TL216 TL217 TL218 TL219, TL221, TL222 TL220 TL223 TL224 0.019 , 25.04 W 0.014 , 41.75 W 0.013 , 63.89 W 0.031 , 51.98 W 0.163 , 47.12 W 0.074 , 47.12 W 0.076 , 15.92 W 0.123 , 51.98 W 0.033 , 51.98 W 0.008 , 51.98 W 0.060 , 51.98 W 0.016 , 41.75 W 0.149 , 47.12 W 0.013 , 41.75 W 0.005 , 41.75 W 0.016 , 41.75 W 0.039 , 41.75 W 0.016 , 41.75 W 0.008 , 25.04 W W1 = 0.025, W2 = 0.025 W1 = 1.524, W2 = 1.524, W3 = 1.27 W = 1.524, L = 0.508 W = 1.524, L = 1.524 W1 = 1.524, W2 = 1.524, W3 = 3.81 W1 = 1.524, W2 = 1.524, W3 = 1.524 W1 = 3.048, W2 = 3.048, W3 = 0.762 W = 1.087, W2 = 3.048 W = 3.048, L = 1.778 W = 1.524, L = 1.346 W = 0.762, L = 1.27 W = 1.087, L = 3.073 W = 1.27, L = 15.926 W = 1.27, L = 7.29 W = 5.283, L = 6.986 W = 1.087, L = 12.103 W = 1.087, L = 3.264 W1 = 1.087, W2 = 1.087, W3 = 0.813 W = 1.087, L = 5.867 W = 1.524, L = 1.524 W = 1.27, L = 14.554 W1 = 1, W2 = 1 W1 = 60, W2 = 60, W3 = 50 W = 60, L = 20 W = 60, L = 60 W1 = 60, W2 = 60, W3 = 150 W1 = 60, W2 = 60, W3 = 60 W1 = 120, W2 = 120, W3 = 30 W = 43, W2 = 120 W = 120, L = 70 W = 60, L = 53 W = 30, L = 50 W = 43, L = 121 W = 50, L = 627 W = 50, L = 287 W = 208, L = 275 W = 43, L = 477 W = 43, L = 129 W1 = 43, W2 = 43, W3 = 32 W = 43, L = 231 W = 60, L = 60 W = 50, L = 573
Table continued next page Data Sheet 8 of 18 Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Reference Circuit, 1842 MHz (cont.)
C801 R802 C803 802
VDD
S5 R804 S3 R805
R801 R803 S2
S4
C205
C206 C204
C105 C104 C103 C102
L2 L1 DUT C201 C207
C106 C107
C101 R102
C202 C203
PTFA220041M
RO4350, .020
(73)

Reference circuit assembly diagram (not to scale)*
Data Sheet
9 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Reference Circuit, 1842 MHz (cont.)
Circuit Assembly Information
DUT PCB PTFA220041M LTN/PTFA220041M LDMOS Transistor 0.508 mm [.020"] thick, er = 3.48 Rogers 4350, 1 oz. copper
Component
Input C101 C102 C103 C104, C105, C106, C107 C801, C802, C803 L1 R102, R805 R801 R802 R803 R804 S2 S3 S4 S5 Output C201 C202, C203 C204 C205, C207 C206 L2
Description
Chip capacitor, 6.2 pF Chip capacitor, 4.7 pF Chip capacitor, 12 pF Chip capacitor, 7.5 pF Chip capacitor, 1.0 F Inductor, 22 nH Resistor, 10 W Resistor, 1200 W Resistor, 1300 W Resistor, 500 W Resistor, 2000 W EMI Suppression Capacitor Potentiometer, 2k W Transistor Voltage regulator
Suggested Manufacturer
ATC ATC ATC ATC Digi-Key Coilcraft Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Murata Digi-Key Infineon Technologies National Semiconductor
P/N
100A6R2CW150X 100A4R7CW150X 100A120JW150X 100A7R5CW150X 445-1411-2-ND 0805HT-22NX_BG P10ECT-ND P1.2KECT-ND P1.3KECT-ND P500ECT-ND P2.0KECT-ND NFM18PS105R0J3 3224W-202ECT-ND BCP56 LM7805
Chip capacitor, 3.6 pF Chip capacitor, 4.7 pF Chip capacitor, 0.1 F Chip capacitor, 12 pF Chip capacitor, 2.2 F Inductor, 22 nH
ATC ATC Digi-Key ATC Digi-Key Coilcraft
100A3R6CW150X 100A4R7CW150X PCC104BCT-ND 100A120JW150X 445-1447-2-ND 0805HT-22NX_BG
Data Sheet
10 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Typical Performance, 940 MHz
VDD = 28 V, IDQ = 50 mA, = 940 MHz, 3GPP WCDMA, P/AR = 8:1, 10 MHz carrier spacing BW 3.84 MHz
22 21 50 22 21 20
Two-carrier WCDMA 3GPP
Power Sweep, CW Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 50 mA, = 940 MHz
70
Gain
Drain Efficiency (%)
20
30
50 40
Efficiency
19 18 17 25 27 20 10 0
19
Efficiency
18 17 30 31 32 33 34 35 36 37 38 30 20
Output Power (dBm)
29
31
33
35
Output Power (dBm)
VDD = 28 V, IDQ = 50 mA, 1 = 939.9 MHz, 2 = 940 MHz
-5 -10 -15 55 50 22
Two-tone Drive-up
VDD = 28 V, IDQ = 50 mA, 1 = 939.9 MHz, 2 = 940 MHz
60
Two-tone Drive-up
-20 -25 -30 -35 -40 33 34
40 35 30
Gain (dB)
Efficiency
Efficiency (%)
20
40
IMD3
19
Efficiency
30
25 20 18 33 34 35 36 37 38 39 20
35
36
37
38
39
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Data Sheet
11 of 18
Rev. 08, 2010-06-07
Efficiency (%)
45
21
Gain
50
IMD (dBc)
Drain Efficiency (%)
40
Gain
60
Gain (dB)
Gain (dB)
PTFA220041M
Confidential, Limited Internal Distribution
Typical Performance, 940 MHz (cont.)
Intermodulation Distortion vs. Output Power
VDD = 28 V, IDQ = 50 mA, 1 = 939.9 MHz, 2 = 940 MHz
CW Gain & Efficiency vs. Output Power & VDD
= 940 MHz
-10 -20
21.5 21.0
Gain
60 50 40 30 20 VDD = 32 V VDD = 28 V VDD = 24 V 30 32 34 36 38 40 10 0
IMD (dBc)
20.0 19.5 19.0 18.5
-40 -50 -60 32 34
5th 7th
Efficiency
24 26 28
36
38
Output Power, PEP (dBm)
Output Power (dBm)
Small Signal CW Gain & Input Return Loss
VDD = 28 V, IDQ = 50 mA
22
0
Gain
18 16 14 12 790 890 990 1090
-10 -15
IRL
-20 -25
Frequency (MHz)
Data Sheet
Input Return Loss (dB)
20
-5
Power Gain (dB)
12 of 18
Rev. 08, 2010-06-07
Efficiency (%)
-30
3rd Order
Power Gain (dB)
20.5
PTFA220041M
Confidential, Limited Internal Distribution
Reference Circuit, 940 MHz

R804 2000 Ohm TL111 TL112
1 4 3 2
VDD
28 V
8
S5
In NC
2 3
TL115
TL113
R805 10 Ohm
C801 1000 pF S3
3
Out NC
6
1
4
7
5
C802 1000 pF
DCVS V1
S2 L1 22 nH TL116 R102 10 Ohm C103 62 pF R101 1.3 Ohm TL101
3 1 2
R803 500 Ohm
C803 1000 pF
R801 1200 Ohm
2 1
C
4
S4
B
3
R802 1300 Ohm
E
TL104 RF_IN
TL105
TL107
2 3 1
TL106
TL102
2 3 1
TL103
2 3 1
TL110
TL114 GATE DUT
C104 10 pF
TL108 C101 16 pF
TL109 C102 22 pF
Er=3.48 H=20 mil RO/RO4350B1
Reference circuit input schematic for = 940 MHz
TL202 TL201 TL212 TL205 TL206
TL211
TL204 C204 62 pF C201 100000 pF TL217
2 3 1
C202 2200000 pF
3 2 1

TL213 TL218
TL216

3 1
TL222
TL203
2
3 1
2
VDD
28 V
TL214 L2 22 nH TL215 TL223 TL221 DRAIN DUT TL219
2
3 1
TL220
TL224
L3 4.3 nH
TL210
TL209
1 3 2
TL207
C205 62 pF
TL208 RF_OUT
C203 3.6 pF
Reference circuit output schematic for = 940 MHz
Data Sheet
13 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Reference Circuit, 940 MHz (cont.)
Electrical Characteristics at 940 MHz Transmission Line
Input TL101 TL102, TL103 TL104 TL105 TL106 TL107 TL108, TL109 TL110 TL111 TL112 TL113 TL114 TL115 TL116 Output TL201 TL202 TL203 TL204 TL205 TL206 TL207 TL208 TL209 TL210 TL211, TL212 TL213, TL215 TL214 TL216 TL217, TL218 TL219 TL220 TL221 TL222 TL223 TL224 0.010 , 24.85 W 0.007 , 41.47 W 0.007 , 63.55 W 0.004 , 51.66 W 0.008 , 41.47 W 0.003 , 41.47 W 0.020 , 41.47 W 0.008 , 41.47 W 0.004 , 24.85 W 0.007 , 41.47 W 0.083 , 46.82 W 0.038 , 46.82 W 0.039 , 15.79 W 0.063 , 51.66 W 0.017 , 51.66 W 0.004 , 51.66 W 0.046 , 51.66 W 0.076 , 46.82 W W = 1.270, L = 14.554 W1 = 0.025, W2 = 0.025 W1 = 1.524, W2 = 1.524, W3 = 1.270 W = 1.270, L = 15.927 W = 1.270, L = 7.290 W = 5.283, L = 6.986 W = 1.087, L = 12.103 W = 1.087, L = 3.264 W1 = 1.087, W2 = 1.087, W3 = 0.813 W =1.087, L = 8.852 W1 = 0.025, W2 = 0.025 W = 1.524, L = 1.524 W = 1.524, L = 0.508 W1 = 1.524, W2 = 1.524, W3 = 3.810 W1 = 1.524, W2 = 1.524, W3 = 1.524 W1 = 3.048, W2 = 3.048, W3 = 0.762 W1 = 1.087, W2 = 3.048 W = 3.048, L = 1.778 W = 1.524, L = 1.346 W = 0.762, L = 1.270 W = 1.087, L = 0.851 W = 50, L = 573 W1 = 1, W2 = 1 W1 = 60, W2 = 60, W3 = 50 W = 50, L = 627 W = 50, L = 287 W = 208, L = 275 W = 43, L = 477 W = 43, L = 129 W1 = 43, W2 = 43, W3 = 32 W = 43, L = 349 W1 = 1, W2 = 1 W = 60, L = 60 W = 60, L = 20 W1 = 60, W2 = 60, W3 = 150 W1 = 60, W2 = 60, W3 = 60 W1 = 120, W2 = 120, W3 = 30 W1 = 43, W2 = 120 W = 120, L = 70 W = 60, L = 53 W = 30, L = 50 W = 43, L = 33 0.008 , 53.85 W 0.027 , 41.47 W 0.010 , 24.85 W 0.003 , 41.47 W 0.007 , 41.47 W 0.004 , 24.85 W 0.004 , 51.66 W 0.017 , 51.66 W 0.038 , 51.66 W 0.047 , 51.66 W 0.004 , 51.66 W 0.000 , 144.28 W 0.019 , 51.66 W W1 = 3.048, W2 = 3.048, W3 =0.762 W1 = 1.087, W2 = 1.087, W3 = 0.813 W = 1.087, L = 3.264 W = 1.087, L = 7.341 W = 1.087, L = 9.144 W1 = 1.087, W2 = 1.087, W3 = 0.762, W = 0.025, L = 0.000 W = 1.087, L = 3.734 W = 1.524 W = 1.016, L = 1.524 W = 1.524, L = 5.080 W = 3.048, L = 1.778 W = 1.524, L = 0.508 W = 1.524, L = 1.270 W1 = 120, W2 = 120, W3 = 30 W1 = 43, W2 = 43, W3 = 32 W = 43, L = 129 W = 43, L = 289 W = 43, L = 360 W1 = 43, W2 = 43, W3 = 30 W = 1, L = 0 W = 43, L = 147 W = 60 W = 40, L = 60 W = 60, L = 200 W = 120, L = 70 W = 60, L = 20 W = 60, L = 50
Electrical Characteristics
Dimensions: mm
Dimensions: mils
Table continued next page Data Sheet 14 of 18 Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Reference Circuit, 940 MHz (cont.)
C801 R802 C803 C802
VDD
S5 R804 S3
R801 R803 S2
S4
R805
C202 C201 C204
L2 L1 C103 DUT C104 C101 R101 R102 C102 L3 C203 C205
PTFA220041M
Reference circuit assembly diagram (not to scale)*
RO4350, .020
(73)

Data Sheet
15 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Reference Circuit, 940 MHz (cont.)
Circuit Assembly Information
DUT PCB PTFA220041M LTN/PTFA220041M-9 LDMOS Transistor 0.508 mm [.020"] thick, er = 3.48 Rogers 4350, 1 oz. copper
Component
Input C101 C102 C103 C104 C801, C802, C803 L1 R101 R102, R805 R801 R802 R803 R804 S2 S3 S4 S5 Output C201 C202 C203 C204, C205 L2 L3
Description
Chip capacitor, 16 pF Chip capacitor, 22 pF Chip capacitor, 62 pF Chip capacitor, 10 pF Chip capacitor, 1000 pF Inductor, 22 nH Resistor, 1.3 W Resistor, 10 W Resistor, 1200 W Resistor, 1300 W Resistor, 500 W Resistor, 2000 W EMI Suppression Capacitor Potentiometer, 2k W Transistor Voltage Regulator
Suggested Manufacturer
ATC ATC ATC ATC Digi-Key Coilcraft Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Murata Digi-Key Infineon Technologies National Semiconductor
P/N
100A160JW150X 100A220JW150X 100A620JW150X 100A100JW150X PCC1772CT-ND 0805HT-22NX_BG P1.3ECT-ND P10ECT-ND P1.2KECT-ND P1.3KECT-ND P5.0KECT-ND P2.0KECT-ND NFM18PS105R0J3 3224W-202ECT-ND BCP56 LM7805
Chip capacitor, 0.1 F Chip capacitor, 2.2 F Chip capacitor, 3.6 pF Chip capacitor, 62 pF Inductor, 22 nH Inductor, 4.3 nH
Digi-Key Digi-Key ATC ATC Coilcraft Coilcraft
PCC104BCT-ND 445-1447-2-ND 100A3R6CW150X 100A620JW150X 0805HT-22NX_BG 0603CS-4N3X_BG
Data Sheet
16 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Package Outline Specifications Package PG-SON-10
0.54 [.021] 2 PLACES 5X .320 [.0126] 2 PLACES 4.00 [.157]
6
7
8
9
10
.815 [.0321]
4.00 [.157]
2.97 [.117]
S
2.37 [.093]
INDEX MARKING
5X .515 [.0203] 2 PLACES
5
4
3
2
1
INDEX MARKING
TOP VIEW
0.30 [.012]
4X 0.65 [.026] 2 PLACES 3.40 [.134]
BOTTOM VIEW
1.42 [.056]
PG-SON-10_po_02-19-2010
0.38 [.015] BOTH SIDES 0.05 [.002]
SIDE VIEW
Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.1 [.004] unless specified otherwise. 4. Package dimension: 4.00 mm x 4.00 mm x 1.42 mm. 5. Pins: S = source, 1 - 5 = gate, 6 - 10 = drain. 6. NiPdAu plating (gold top layer): 0.025 - 0.127 micron [1 - 5 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 17 of 18 Rev. 08, 2010-06-07
PTFA220041M V4 Confidential, Limited Internal Distribution Revision History: 2010-06-07 Previous Version: 2010-04-15, Data Sheet Page Subjects (major changes since last revision) 6 Updated broadband circuit impedance
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International
Edition 2010-06-07 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 18 of 18 Rev. 08, 2010-06-07

▲Up To Search▲

Price & Availability of PTFA220041M

	To Download PTFA220041M Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .